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MIRSIL

MIRSIL™ (MID INFRARED SILICON) A DISRUPTIVE BAND-EDGE MODIFIED BULK SILICON TECHNOLOGY FOR MID INFRARED (2-5.5µm) DETECTION AND IMAGING SUMMARY The new MIRSIL™ rare-earth enhanced silicon detector is a proven breakthrough in the detection of mid infrared light, initially in the 2-5.5µm range, with the possibility of detection...

Published: 8/19/2020 | Inventor(s):

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Category(s): Computing, Electronics, Diagnostics, Chemistry, Physics, Engineering, Energy

Highly Boron Doped Ultrashallow Junction Technology

Highly Boron Doped Ultrashallow Junction Technology CMOS technology is rapidly scaling towards 45nm and beyond, with junction depths decreasing towards 10nm. We present a method employing existing ion implantation and annealing equipment having the capacity to achieve these depths with high dopant activation. The method is expected to work over...

Published: 3/20/2020 | Inventor(s):

Keywords(s):

Category(s): Computing, Electronics, Engineering